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ARCHIVE INFORMATION
MRF6P3300HR3 MRF6P3300HR5
15
RF Device Data
Freescale Semiconductor
TYPICAL TWO-TONE BROADBAND CHARACTERISTICS
Figure 32. Intermodulation Distortion
Products versus Tone Spacing @ 470 MHz
1 10010
-60
0
0.1
7th Order
TWO-T ONE SPACING (MHz)
VDD
= 32 Vdc, P
out
= 270 W (PEP), I
DQ
= 1600 mA
Two-Tone Measurements
f1 = 470 MHz, f2 = 470 MHz + Tone Spacing
5th Order
3rd Order
-10
-20
-40
-50
IMD, INTERMODULATION DISTORTION (dBc)
-30
Figure 33. Intermodulation Distortion
Products versus Tone Spacing @ 560 MHz
1 10010
-60
0
0.01
7th Order
TWO-T ONE SPACING (MHz)
VDD
= 32 Vdc, P
out
= 270 W (PEP), I
DQ
= 1600 mA
Two-Tone Measurements, f = 560 MHz
5th Order
3rd Order
-10
-20
-40
-50
IMD, INTERMODULATION DISTORTION (dBc)
-30
0.1
Figure 34. Intermodulation Distortion
Products versus Tone Spacing @ 660 MHz
1 10010
-60
0
0.01
7th Order
TWO-T ONE SPACING (MHz)
VDD
= 32 Vdc, P
out
= 270 W (PEP), I
DQ
= 1600 mA
Two-Tone Measurements, f = 660 MHz
5th Order
3rd Order
-10
-20
-40
-50
IMD, INTERMODULATION DISTORTION (dBc)
-30
0.1
Figure 35. Intermodulation Distortion
Products versus Tone Spacing @ 760 MHz
1 10010
-60
0
0.01
7th Order
TWO-T ONE SPACING (MHz)
VDD
= 32 Vdc, P
out
= 270 W (PEP), I
DQ
= 1600 mA
Two-Tone Measurements, f = 760 MHz
5th Order
3rd Order
-10
-20
-40
-50
IMD, INTERMODULATION DISTORTION (dBc)
-30
0.1
Figure 36. Intermodulation Distortion
Products versus Tone Spacing @ 860 MHz
1 10010
-60
0
0.1
7th Order
TWO-T ONE SPACING (MHz)
VDD
= 32 Vdc, P
out
= 270 W (PEP), I
DQ
= 1600 mA
Two-Tone Measurements, 6 MHz Tone Spacing
f1 = 860 MHz - Tone Spacing, f2 = 860 MHz
5th Order
3rd Order
-10
-20
-40
-50
IMD, INTERMODULATION DISTORTION (dBc)
-30
相关PDF资料
MRF6P9220HR5 MOSFET RF N-CH 28V 47W NI-860C3
MRF6S18060NBR1 MOSFET RF N-CH 26V 60W TO272-4
MRF6S18100NR1 MOSFET RF N-CH 28V 100W TO2704
MRF6S18140HSR5 MOSFET RF N-CH 28V ESD NI880S
MRF6S19060GNR1 MOSFET RF N-CH 28V TO-270-2 GW
MRF6S19100GNR1 MOSFET RF N-CH 28V TO-270-2 GW
MRF6S19100HSR5 MOSFET RF N-CHAN 28V 22W NI-780S
MRF6S19120HSR5 MOSFET RF N-CHAN 28V 19W NI-780S
相关代理商/技术参数
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MRF6P9220HR3_06 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P9220HR3_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P9220HR5 功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
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MRF6S18060NBR1 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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